Low‐Temperature Photoluminescence Investigation of Light‐Induced Degradation in Boron‐Doped CZ Silicon

نویسندگان

چکیده

Light-induced degradation (LID) in boron-doped Czochralski grown (CZ) silicon is a severe problem for devices such as solar cells or radiation detectors. Herein, CZ investigated by low-temperature photoluminescence (LTPL) spectroscopy. An LID-related peak already found while analyzing indium-doped p-type samples and associated with the ASi–Sii defect model. it whether similar present spectra of samples. The presence change signal intensity due to activation boron well. Numerous measurements on are made. For this purpose, four different doping concentrations analyzed. treatments based LID cycle. During an cycle, additional shoulder neither areas boron-bound exciton transverse acoustic nonphonon-assisted peaks (BTA, BNP) nor area optical phonon-assisted (BTO) found. formation also does not lead lower (PL) ratio BTO(BE)/ITO(FE).

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Progress in Understanding and Reducing the Light Degradation of Cz Silicon Solar Cells

Solar cells made on boron-doped Czochralski (Cz) silicon show a degradation in performance when exposed to light until a stable efficiency is reached. This effect is due to the creation of metastable defects in the Cz silicon base which strongly reduce the bulk carrier lifetime. In a recent model, proposed by one of the authors, the metastable defect was tentatively identified with a boron-oxyg...

متن کامل

Light-induced Degradation in Cz Silicon Solar Cells: Fundamental Understanding and Strategies for Its Avoidance

Solar cells manufactured on boron-doped Czochralski-grown silicon (Cz-Si) degrade in performance when exposed to light or minority carriers are injected in the dark until a stable efficiency is reached. This effect, which is now known for almost 30 years, is due to the activation of a specific metastable defect in the Cz-Si material. Although a conclusive explanation of the effect is still to b...

متن کامل

Modeling and Simulation of Oxygen Precipitation in CZ Silicon

This paper describes modeling and simulation for the growth and dissolution of oxygen precipitates in Czochralski silicon(CZ) wafers during heat treatment. Growth and dissolution rates arc newly derived and inserted into a set of chemical rate equations(CILEs) and a Fokkor-Planck equation(FPE). Annealing ambients and surface conditions are taken into account for solving continuity equations in ...

متن کامل

investigation of (meta)discourse markers in elt coursebooks

the present study aimed to investigate representation of discourse markers and metadiscourse markers in conversations and readings of general elt coursebook series used in the language centers of iran. to this aim, four elt coursebooks popularly taught in language centers of this country were analyzed based on fung and carter’s (2007) framework regarding discourse markers and hyland’s (2005) fr...

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Physica Status Solidi A-applications and Materials Science

سال: 2022

ISSN: ['1862-6300', '1862-6319']

DOI: https://doi.org/10.1002/pssa.202200180